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回复于 2018-08-30
沙发
This reference design functions from a base of silicon carbide (SiC)
MOSFETs that are driven by a C2000 microcontroller (MCU) with
SiC-isolated gate drivers. The design implements three-phase
interleaving and operates in continuous conduction mode (CCM) to achieve
a 98.46% efficiency at a 240-V input voltage and 6.6-kW full power. The
C2000 controller enables phase shedding and adaptive dead-time control
to improve the power factor at light load. The gate driver board (see
TIDA-01605) is capable of delivering a 4-A source and 6-A sink peak
current. The gate driver board implements a reinforced isolation and can
withstand more than 100-V/ns common-mode transient immunity (CMTI). The
gate driver board also contains the two-level turnoff circuit, which
protects the MOSFET from voltage overshoot during the short-circuit
scenario.
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楼主
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回复于 2018-08-30
2#
- High-power-density, high-efficiency PFC design to power systems up to 6.6 kW
- Half-bridge- and compact isolated gate driver with reinforced isolation and two-level turnoff protection
- Full digital control with high-performance C2000™ controller to enable advanced control scheme
- 98.46% peak efficiency, greater than 0.99 power factor and less than 2% total harmonic distortion (THD)
- Three-phase interleaved operation with phase shedding control
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